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Thursday, Dec. 9, 2010
3 p.m., NSERL 3.204








“The Nature of the Interface Between GaAs and Oxides”
Dr. John Robertson, University of Cambridge

GaAs and other III-V semiconductors are being studied as possible high mobility channel materials for future FETs. It has proved very difficult, however, to passivate their surfaces with oxides. I will discuss calculations of the nature of the interface between GaAs and various oxides, the interface defects and a comparison with the data from XPS experiments such as those carried out at UT Dallas.

John Robertson is a professor in the Electronic Devices and Materials Group of the Department of Engineering at Cambridge. He has a wide range of interests, including amorphous silicon and diamond-like carbon. He also has a strong interest in ferroelectric oxides, which are likely to be important as gate dielectrics in future CMOS devices and as storage media in nonvolatile ferroelectric random access memories, or FRAMs.