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Thursday, Feb. 18, 2010,
1 p.m., NSERL 3.204

 

 

 

 

 

 

 

 

 

 

 

 

 

“Are GaN HEMTs the Next Generation GaAs Devices?”
Dr. Paul Saunier, Senior Fellow, TriQuint Semiconductor

Abstract
In this talk we will review the latest advances in GaAs technology for microwave applications. We will then review the basics of the new AlGaN/GaN HEMT (high electron mobility transistor) devices. The use of wide bandgap material is bringing transistor performances to a new level, allowing unprecedented power densities at microwave frequencies. We will in particular see the impact that the “new” field-plates (well known for decades in the Si-MOS) have had on the performance of the recent GaAs and GaN devices.

Bio
A senior fellow at TriQuint Semiconductor, Paul Saunier is responsible for the development of advanced GaN and GaAs devices for RF applications. Prior to joining TriQuint in 1999, he was a Texas Instruments fellow managing the FET Group of TI Central Research Laboratories. He obtained his MS and PhD from Carnegie Mellon University after graduating from Ecole Centrale de Lyon in France, and he has more than 100 publications.