“A Comprehensive Electro-physical Model for InxGa1-xAs MOSFETs
with High-k Gate Dielectrics”
Dr. Eric M. Vogel, UT Dallas
Because of a significantly higher bulk electron mobility compared to silicon, III-V semiconductors with high-k gate dielectrics are being considered for future CMOS. In this presentation, the physical and electrical properties of Al2O3 and HfO2 formed using atomic layer deposition (ALD) on InxGa1-xAs with different surface passivation techniques have been studied. A model based on disorder-induced gap states associated with oxidation of the semiconductor during ALD is shown to explain the measurements of electrically active interfacial defects. MOSFET transport properties are shown to be heavily influenced by remote dielectric phonons and surface roughness. This comprehensive electro-physical model provides key fundamental insights necessary to further engineer the interface of III-V semiconductors with high-k gate dielectrics.
Eric Vogel is an associate professor of materials science and engineering and of electrical engineering at UT Dallas. He is also associate director of the Texas Analog Center of Excellence and leads the University’s portion of the Southwest Academy for Nanoelectronics. Prior to joining UT Dallas in 2006, he was leader of the CMOS and Novel Devices Group at the National Institute of Standards and Technology, where he also founded the Nanofab. He received his PhD in electrical engineering in 1998 from North Carolina State University. His research interests relate to materials and devices for future electronics, including advanced MOS and nanoelectronic devices and materials. He has published more than 100 archival publications, written five book chapters and given over 50 invited talks and tutorials. He was general chair of the 2005 IEEE Semiconductor Interface Specialists Conference, high-k (dielectric) program chair of the 2008 (2001) IEEE International Reliability Physics Symposium and co-organizer of the 2000 MRS Workshop on High-k Gate Dielectrics. He is a senior member of IEEE and a member of APS and MRS.