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Thurs., March 8, 2012
10:45 a.m., NSERL 3.204

 

 

 

 

 

 

 

"Origin of the conductive filament in RRAM and resistive switching processes"
Gennadi Bersuker, SEMATECH

Abstract
Among the variety of technology options for the non-volatile memory devices, the resistive switching memory (RRAM) technology, which is based on reversible changes of the resistivity of a conductive filament formed in a dielectric film, is currently under intense consideration for its superior scaling and low power opportunities. While progress had been made in identifying key factors driving the resistive switching in metal oxides, there is no sufficiently developed microscopic description of the conductive filament features enabling memory operations. This presentation discusses the resistive switching in the HfO2-based RRAM as follows from nanoscale characteristics of the conductive filament, which are determined by the process governing the filament formation.

Bio
Gennadi Bersuker completed his M.S. and Ph.D. in Physics at the Leningrad State University and Kishinev State University, respectively. After graduation, he joined Moldavian Academy of Sciences, and then worked at Leiden University and the University of Texas at Austin. Since 1994, he has been working at SEMATECH on electrical characterization of Cu/low-k interconnect, high-k gate stacks, advanced memory, and III-V logic devices. He is the Chair of Reliability Physics EDS committee, an Editor of IEEE Transactions on Device Materials and Reliability and has been involved in organizing, chairing, or serving as a committee member in a number of technical conferences, including IRW, IRPS, IEDM, APS, etc. He is a SEMATECH Fellow and has published over 250 papers on the electronic properties of dielectrics and semiconductor processing and reliability.