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Jiyoung Kim



1994 PhD, Materials Science and Engineering, University of Texas at Austin
1988 MS, Metallurgical Engineering, Seoul National University
1986 BS, Metallurgical Engineering, Seoul National University

Research Summary

  • Advanced Materials and Novel Devices for Information Technology
  • Novel thin film processing including ALD (Atomic Layer Deposition), unique applications to 3-D nanostructures (such as Nanotubes), low temperature selective deposition, atomic layer etching and CMOS applications
  • Gate Stack Engineering for More Moore and More than Moore Applications
  • 2D Materials, such Graphene and TMDs, and their fabrication and device applications
  • Nano organic/inorganic hybrid materials and devices
  • Novel memory device materials, such as FeRAM and flash memory, fabrication and applications
  • Flexible electronics including flexible transparent electrodes
  • Nanomaterials for energy applications
  • Novel materials and devices for Non-Von Neumann Architectures and Cognitive computing

Selected Publications

  • Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim, “Atomic layer deposition of silicon nitride thin films: A review of recent progress, challenges, and outlooks,” Materials, 9(12), pp. 1007 (2016)

  • Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hengji Zhang, Santosh KC, Manuel Quevedo-Lopez, Jian Wang, Julia Hsu, KJ Cho, Jiyoung Kim, “Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD),” J. Mater. Chem. C. 4, pp. 2382-2389 (2016)

  • Lanxia Cheng, Xiaoye Qin, Antonio T. Lucero, Angelica A. Zacatzi, Robert M. Wallace, Kyeongjae Cho, and Jiyoung Kim, “Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone,” ACS Appl. Mater. Interface, 6, pp. 11834-11838 (2014)

  • T. J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, “Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in-situ x-ray photoelectron spectroscopy,” Appl. Phys. Lett., 97, 092904 (2010)

  • J. Kim, T. W. Kim, “Initial surface reactions of atomic layer deposition,” JOM, 61(6), pp.19-24 (2009) (Invited review article)

  • B. Lee, G. Mordi, M.J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, KJ Cho, J. Kim, L. Colombo, “Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics,” Appl. Phys. Lett., 92, 203102 (2008)

  • C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Appl. Phys. Lett., 92, 071901 (2008)

  • C. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. Sung, H. Shin, “Template directed oxide nanotubes: Synthesis, characterization, and applications,” Chem. Mater., 20, pp. 756-767 (2008) 

  • H. Shin, D. Jung, J. Lee, M. Sung and J. Kim, “Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultra-Precise Wall Thickness Control,” Advanced Materials, 16 (14), pp. 1197-1200 (2004).