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Kim

Phone: 972-883-6412
Office: RL 4.410
Mailstop: RL10
[email protected]
Research Group Site

Curriculum Vitae

 

 

 

 

 

 

 

 

 

 faculty

Jiyoung Kim

Professor

Education

1994 PhD, Materials Science and Engineering, University of Texas at Austin
1988 MS, Metallurgical Engineering, Seoul National University
1986 BS, Metallurgical Engineering, Seoul National University

Research Summary

  • Advanced Materials and Novel Devices for Information Technology
  • Novel thin film processing including ALD (Atomic Layer Deposition), unique applications to 3-D nanostructures (such as Nanotubes), low temperature selective deposition, atomic layer etching and CMOS applications
  • Gate Stack Engineering for More Moore and More than Moore Applications
  • 2D Materials, such Graphene and TMDs, and their fabrication and device applications
  • Nano organic/inorganic hybrid materials and devices
  • Novel memory device materials, such as FeRAM and flash memory, fabrication and applications
  • Flexible electronics including flexible transparent electrodes
  • Nanomaterials for energy applications
  • Novel materials and devices for Non-Von Neumann Architectures and Cognitive computing

Selected Publications

  • Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim, “Atomic layer deposition of silicon nitride thin films: A review of recent progress, challenges, and outlooks,” Materials, 9(12), pp. 1007 (2016)

  • Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hengji Zhang, Santosh KC, Manuel Quevedo-Lopez, Jian Wang, Julia Hsu, KJ Cho, Jiyoung Kim, “Organic-Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD),” J. Mater. Chem. C. 4, pp. 2382-2389 (2016)

  • Lanxia Cheng, Xiaoye Qin, Antonio T. Lucero, Angelica A. Zacatzi, Robert M. Wallace, Kyeongjae Cho, and Jiyoung Kim, “Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone,” ACS Appl. Mater. Interface, 6, pp. 11834-11838 (2014)

  • T. J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, “Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in-situ x-ray photoelectron spectroscopy,” Appl. Phys. Lett., 97, 092904 (2010)

  • J. Kim, T. W. Kim, “Initial surface reactions of atomic layer deposition,” JOM, 61(6), pp.19-24 (2009) (Invited review article)

  • B. Lee, G. Mordi, M.J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, KJ Cho, J. Kim, L. Colombo, “Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics,” Appl. Phys. Lett., 92, 203102 (2008)

  • C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Appl. Phys. Lett., 92, 071901 (2008)

  • C. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. Sung, H. Shin, “Template directed oxide nanotubes: Synthesis, characterization, and applications,” Chem. Mater., 20, pp. 756-767 (2008) 

  • H. Shin, D. Jung, J. Lee, M. Sung and J. Kim, “Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultra-Precise Wall Thickness Control,” Advanced Materials, 16 (14), pp. 1197-1200 (2004).