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Phone: 972-883-6638
Office: RL 4.414
Mailstop: RL10
[email protected]
Research Group Site

Curriculum Vitae










Robert M. Wallace

Professor - Physics (affiliated courtesy)
Professor - EE (affiliated courtesy)
Professor - ME (affiliated courtesy)
Professor and Erik Jonsson Distinguished Chair


1988 PhD Physics, University of Pittsburgh
1984 MS Physics, University of Pittsburgh
1982 BS Physics and Applied Mathematics, University of Pittsburgh

Research Summary

Research in the Wallace group focuses on the study of surfaces and interfaces, particularly with applications to electronic materials and the resultant devices fabricated from them. Driven by integrated circuit scaling and industrial experience, our work has led to participation on several nationally renowned academic centers sponsored by the Semiconductor Research Corporation with tasks focusing on the interfacial physics and chemistry of metals and dielectrics in contact with semiconductor and semimetal surfaces, and the resultant device behavior correlations. This work has also enabled an international NSF-sponsored program with colleagues in Ireland and Northern Ireland. As such, the majority of our work is interdisciplinary, with attention to the fundamental science as well as potential applications and any associated constraints.

Our current interests include materials systems which explore materials systems leading to concepts that may enable further scaling of integrated circuit technology and beyond CMOS-based logic. We have current research programs engaged in the study of the surfaces and interfaces of compound semiconductor systems including arsenides (e.g. InGaAs), nitrides (e.g. GaN), phosphides (e.f. InP), as well as antimondies (e.g. GaSb). This research thrust extends our previous work on high-k dielectrics on more conventional Si-based materials, where an emphasis is made on the correlation of physicochemical properties and electronic performance. In addition to laboratory studies of these compound semiconductor interfaces and surfaces, device fabrication is conducted in our cleanroom facilities for this work. We also have active programs in the study of 2D materials surfaces such as Transition Metal Dichalcogenides, Black- Phosphorus, and graphene. This work is funded through a combination of industrial and federal agencies.

Selected Publications

  • YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, MJ Kim, L-J Li, RM Wallace, S Datta, JA Robinson, “Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures,” Nature Communications 6, 7311 (2015)
  • H. Zhu, S. McDonnell, X.Qin, A. Azcatl, L. Cheng, R. Addou, J. Kim, P. D. Ye and R. M. Wallace, "Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in situ Interface Study," ACS Applied Materials and Interfaces, 7, 13038 (2015)
  • S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle, “Defect-dominated doping and contact resistance in MoS2, ACS Nano 8 (3), 2880-2888 (2014).
  • P. Zhao, D. Kiriya, A. Azcatl, C. Zhang, M. Tosun, Y-S. Liu, M. Hettick, J.S. Kang, S. McDonnell, Santosh KC, J. Guo, K. Cho, R.M. Wallace, A Javey, “Air Stable p-Doping of WSe2 by Covalent Functionalization,” ACS Nano, 8, 10808 (2014)
  • Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, RM Wallace, KA Cychosz, M Thommes, D Su, EA Stach, RS Ruoff, “Carbon-based supercapacitors produced by activation of graphene,” Science 332 (6037), 1537-1541 (2011)
  • A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, L Colombo, EM Vogel, RS Ruoff, RM Wallace, “The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2,” Applied Physics Letters 99 (12), 122108 (2011)
  • C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, "Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning," Applied Physics Letters 94 162101(2009).
  • R.M.Wallace and G. Wilk, "High-k Dielectric Materials for Microelectronics," Critical Reviews in Solid State and Materials Sciences 28, 231 (2003) (Invited Review Article).
  • G.D.Wilk, R.M.Wallace and J.M.Anthony, "High-k Gate Dielectrics: Current Status and Materials Properties Considerations", Journal of Applied Physics 89, 5243(2001). (Invited Review Article, >5500 citations in Google Scholar)

Selected Awards/Honors

  • Fellow IEEE
  • Fellow AVS
  • IBM Faculty Award
  • Erik Jonsson School Distinguished Senior Research Contributions Award