George Rozgonyi
Professor
rozgonyi@ncsu.edu
B.S. Aeronautical Engineering, Notre Dame 1958
M.S. Engineering Science, Notre Dame 1960
Ph.D. Aero-Space Sciences, University of Arizona 1963
1963-1982 Bell Telephone Laboratories, Murray Hill, NJ, MTS
1982- present North Carolina State University, Professor
Research Interests: Defect engineering of semiconductors, including radiation stimulated annealing and epitaxial growth of silicon, impurity controling silicon via intrinsic and extrinsic gettering processes, point defect/extended defect dynamics during ion implantation and silicidation, and nano-scale contacts and junctions for giga-scale integrated circuit technology.
 
George Rozgonyi joined the NCSU faculty in 1982 after almost 20 years with AT&T Bell Telephone Laboratories. Currently he is the director of an NSF sponsored Industry/University Co-operative Research Center called SiWEDS for "Silicon Wafer Engineering and Defect Science," which is a consortium of seven universities and seven silicon wafer/semiconductor manufacturers. 
The control of dopants, impurities, electrical contacts and defects for Giga-Scale Integration (GSI) of silicon devices requires a complex set of crystal and processing conditions to be satisfied simultaneously. In order to achieve the maximum yield and highest level of electrical performance for a given device design and unit process, we have developed a set of defect diagnostic tools, which are available for individual process step evaluation. The resulting chemical, structural and electrical data often seed ideas for exploring new modes of materials processing. Thus, we strive to push Defect Engineering beyond the level of a simple diagnostic feedback to the implementation of innovative new processes. Related examples include dislocation enhanced dopant diffusion, extrinsic gettering of impurities at low temperatures, and silicide formation via diffusion through nano-scale semi-permeable membranes. The generated samples, equipment and human resources used in the above projects provide a rich base for undergraduate student exposure to real-world lab experiences which amplifies their basic physics, chemistry and materials science classroom work.

PUBLICATIONS :

   Technical Papers  1998 - 1999
 

I. MeV Implantation

  1. "Gettering of Fe in MeV Ion Implanted Silicon" 
    Proc. SRC TECHCON, (1998) 
    K. Beaman, O. Kononchuk, S. Koveshnikov, C. M. Osburn, and G. A. Rozgonyi

  2. "Mechanism of Iron Gettering in MeV Si Ion Implanted Epitaxial Silicon" 
    J. Appl. Phys, 84, 3078 (1998). 
    S. Koveshnikov and G. A. Rozgonyi 

  3. "Impurity Gettering to Secondary Defects Created by MeV Ion Implantation" 
    J. Appl. Phys. 84, 2459 (1998). 
    R. A. Brown, O. Kononchuk, S. Koveshnikov, A. Knights, F. Gonzales, and G. A. Rozgonyi 
  4. "Diagnostic Basis for Silicon Wafer Engineering and Defect Science" (invited) 
    Semiconductor Silicon 1998, H. R. Huff, et al. (Eds.), ECS PV 98-1, 279 (1998). 
    G. A. Rozgonyi 
  5. "Gettering of Fe, Cu, and Ni in MeV Implanted Epitaxial Silicon" 
    High Purity Silicon V, C. Claeys, et al. (Eds._, ECS PV 96-13,341 (1998). 
    S. Koveshnikov, O. Kononchuk, K. Beaman, and G. A Rozgonyi 
  6. "Multilayer defect structure formed under high energy ion implantation in Si" 
    Defects in Silicon III, T. Abe, et al. (Eds.), ECS PV 99-1,181 (1999). 
    L. S. Uspenskaya, C. R. Cho, N. Yarykin, and G. A. Rozgonyi 
  7. "Simulation of Metallic Impurity Gettering in Si by MeV Ion Implantation" 
    Nucl. Instrum. Methods Phys. Res. B. 148, 322 (1999) 
    R. A. Brown, O. Kononchuk, and G. A. Rozgonyi 
  8. "Gettering Issues Using MeV Ion Implantation" 
    Proc. IUMRS-ICAM '99 (Beijing, China, June 1999) 
    G. A. Rozgonyi, J. M. Glasko, K. L. Beaman, and S. V. Koveshnikov 
  9. "Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon" 
    Proc. Gadest '99 (Höör, Sweden, Sept. 1999) 
    K. L. Beaman, J. M. Glasko, S. V. Koveshnikov, and G. A. Rozgonyi 
II. Related Studies of Point Defect Evolution During Ion Implantation Funded by NSF
  1. "In-situ DLTS of Defect Evolution in Silicon Following Ion Implantation at 85 K" 
    Mat. Res. Soc. Proc. Vol. 532, 73-78 (1998) 
    C. R. Cho, R. A. Brown, O. Kononchuk, N. Yarykin, G. A. Rozgonyi, and R. A. Zuhr 
  2. "Evolution of Deep-level Centers in p-type Si Following Ion Implantation at 85 K" 
    Appl. Phys. Lett., 74, 1263 (1999) 
    C. R. Cho, N. Yarykin, R. A. Brown, O. Kononchuk, G. A. Rozgonyi, and R. A. Zuhr 
  3. "Photoexcitation Induced Suppression of Point Defects During Ion Implantation in Si" 
    Defects in Silicon III, T. Abe, et al (Eds.), ECS PV 99-1,172 (1999) 
    C. R. Cho, N. Yarykin, G. A. Rozgonyi, and R. A. Zuhr 
  4. "Suppression of Point Defects in Ion Implanted Si due to In-Situ Photoexcitation" 
    Proc. MRS, Spring 1999 
    C. R. Cho, N. Yarykin, G. A. Rozgonyi, and R. A. Zuhr
  5. "The Impact of In-Situ Photoexcitation On the Formation of  Vacancy-Type Complexes
     in Silicon Implanted at 85 and 295 K"  Appl. Phys. Lett., 75, 241 (1999) 
     N. Yarykin, C. R. Cho, G. A. Rozgonyi, and R. A. Zuhr 
III. Silicon-on-Insulator
  1. "Lateral Gettering of Fe on Bulk and Silicon-On-Insulator Wafers"
    J. Electrochem. Soc., 146, 1925 (1999) 
    K. Beaman, O. Kononchuk, S. Koveshnikov, C. Osburn, and G. A. Rozgonyi 
  2. "Diffusion of Iron in the Silicon Dioxide Layer of Silicon-On-Insulator Structures"
    Appl. Phys. Lett., 73, 1206 (1998) 
    O. Kononchuk, K. G. Korablev, N. Yarykin, and G. A. Rozgonyi 
  3. "Diffusion and Gettering of 3d Transition Metals (Fe, Cu, Ni) in SOI Structures" 
    Silicon-on-Insulator Technology and Devices ECS PV 99-1, 172 (1999) 
    K. Korablev, G. A. Rozgonyi, et al. 
     
IV. Crystal Growth, Point Defects, GOI, Etc.

  1. "Analysis of Capacitor Breakdown Mechanisms Due to Crystal-Originated Pits"
    IEEE Electron. Device. Lett., 20, 504 (1999) 
    T. Ono, G. A. Rozgonyi, H. Horie, M. Miyazaki, and Hideki Tsuya

  2. "Oxygen Precipitate Induced Dislocation In Heavily Boron Doped Cz Silicon"

    3. J. Electrochem. Soc., 146, 3461 (1999) 
    T. Ono, A. Romanowski, E. Asayama, H. Horie, K. Sueoka, H. Tsuya, and G. A. Rozgonyi 

  3. "Direct Observation of Medium Field Breakdown Origin on MOS Capacitors Containing

    4.  Grown-In CZ Crystal Defects"
    Semiconductor Silicon 1998, H. R. Huff, et al. (Eds.), ECS PV 98-1, 1593 (1998)
    M. Tamatsuka, G. A. Rozgonyi, et al.

  4. "Oxygen Precipitation Behavior in 300mm Czochralski Polished Silicon Wafers"
    J. Electrochem. Soc., 146, 3807 (1999)
    High Purity Silicon V, C. Claeys, et al. (Eds.), ECS Pb 96-13, 125 (1998)
    T. Ono, G. A. Rozgonyi, C. Au, T. Messina, R. K. Goodall, and H. R. Huff

  5. "A Vacancy/Oxygen Based Model Describing the Radial Distribution of Voids,

    6.  OSF-Ring, and AOP in Ring Structure Cz Silicon Crystals"

    High Purity Silicon V, C. Claeys, et al. (Eds.), ECS PV 96-13, 147 (1998)
    K. M. Bae, G. A. Rozgonyi, et al

  6. "Surface Pit Formation During Hydrogen Annealing of CZ Si Wafers"
    High Purity Silicon V, C. Claeys, et al. (Eds.), ECS PV 96-13, 292 (1998)
    K. M. Bae, G. Rozgonyi, et al.

  7. "Dislocation Control on Si Wafers in a Susceptor Based RTP Tool"
    6th Intern. Conf. on Advanced Thermal Processing of Semiconductors,

    8.  RTP '98, Kyoto, Japan, Sept. 9-11,1998.A. Karoui, et al.

  8. "Impact of Heavy Boron and Antimony Doping on COPs and GOI"
    Defects in Silicon III, T. Abe, et al (Eds.), ECS PV 99-1, 300(1999)
    T. Ono, G. A. Rozgonyi, et al.
  9. "Oxygen Diffusion in Heavily B, Sb, and As Doped Cz Silicon Wafers"
    Appl. Phys. Lett., 74, 3648 (1999)
    T. Ono, E. Asayama, H. Horie, K. Sueoka, H. Tsuya and G. A. Rozgonyi
  10. "Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon"
    J. Electrochem. Soc., 146, 2239 (1999)
    T. Ono, E. Asayama, H. Horie, M. Hourai, K. Sueoka, H. Tsuya, G. A. Rozgonyi

  11. "The impact of in-situ photoexcitation on the formation of vacancy-type 

    12. complexes in silicon implanted at 85 and 295K" Appl. Phys. Lett., 75, 241 (1999)
    N. Yarykin, C. R. Cho, G. A. Rozgonyi, R. A. Zuhr

  In Preparation

  1. "Oxygen Precipitation Related Defects In p- and p+ Si Wafers: Electrical
     Activity and Morphology"J. Electrochem. Soc.
    H. Kirk, T. Ono, T. Sasaki, and G. A. Rozgonyi

  2. "MOS/EBIC Contrast Of Oxygen Precipitation Related Defects"
    T. Ono, T. Sasaki, H. Kirk and G. A. Rozgonyi
    Submitting to J. Appl. Phys.

  3. "Size Distribution Of Oxide Precipitates In Annealed Czochralski Silicon"
    T. Sasaki, T. Ono, and G. A. Rozgonyi
    Submitted to Appl. Phys. Lett.
  4. "Oxide Precipitate Distribution Determined By Bright Field Infrared Laser
    Interferometer (Optical Precipitate Profiler) In Annealed Czochralski Si"
    T. Sasaki, T. Ono, and G. A. Rozgonyi
    To be presented at Oct.1999 ECS Meeting, Honolulu, Hawaii