2021 Research Highlights

Dr. Chadwin Young’s group was informed by AIP Publishing that two of their articles were recently highlighted in an email message promoting a new collection on 2D transistors in Applied Physics Letters. The compilation was curated to showcase the evolution in 2D materials-based transistor investigations where two papers by Pavel Bolshakov PhD’19 were chosen by the guest editor as influential contributions to the field. The selected papers showcased: 1) How using aluminum oxide (Al₂O₃) as the bottom-gate oxide can have a positive impact on the top-gate MoS₂ transistor performance and 2) investigated the promise of dual-gated MoS₂ FETs, which deliver noteworthy insight into the influence of oxide charges and noticeably enhances overall device performance, where a near-ideal subthreshold swing of ~60 mV/dec and a high field effect mobility of 100 cm^²V·s were achieved. These papers would not have been possible without the in-situ deposition and characterization capability of Dr. Wallace’s group.

P. Bolshakov, A. Khosravi, P. Zhao, P.K. Hurley, C.L. Hinkle, R.M. Wallace, and C.D. Young, “Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics,” Applied Physics Letters, vol. 112, no. 25, p. 253502, 2018.
P. Bolshakov, P. Zhao, A. Azcatl, P.K. Hurley, R.M. Wallace, and C.D. Young, “Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer,” Applied Physics Letters, vol. 111, no. 3, p. 032110, 2017.

OTHER PUBLICATIONS

Yaoqiao Hu, Xiaolong Yao, Darrell G. Schlom, Suman Datta, and Kyeongjae Cho, “First Principles Design of High Hole Mobility p-Type Sn–O–X Ternary Oxides: Valence Orbital Engineering of Sn₂+ in Sn₂+–O–X by Selection of Appropriate Elements X,” Chem. Mater. 2021, 33, 1, 212–225.
Yeonghun Lee, Grigory Kolesov, Xiaolong Yao, Efthimios Kaxiras and Kyeongjae Cho, “Nonadiabatic dynamics of cobalt tricarbonyl nitrosyl for ligand dissociation induced by electronic excitation,” Sci Rep 11, 8997 (2021).
R. T. Piper, T. B. Daunis, W. Xu, K. A. Schroder, and J. W. P. Hsu, “Photonic Curing of Nickel Oxide Transport Layer and Perovskite Active Layer for Flexible Perovskite Solar Cells: A Path towards High-throughput Manufacturing,” Front. Energy Res. 9, 640960 (2021).
M. G. S. Rao, J. Meza-Arroyo, K. C. S. Reddy, L. N. S. Murthy, T. B. Daunis, M. S. de Urquijo-Ventura, F. Garibay-Martinez, J. W. P. Hsu, and R. Ramirez-Bon, “Tuning the Electrical Performance of Solution-Processed In2O3TFTs by Modulation of Temperature with sol-gel HfO2-PVP Hybrid Dielectric,” Mater. Today Comm. 26, 102120 (2021).
J.S. Lee, J. Oviedo, Y.M. Nuwan, D.Y. Bandara, X. Peng, L. Xia, Q. Wang, K. Garcia, J. Wang, M. Kim, and M.J. Kim, “Detection of Nucleotides in Hydrated ssDNA via 2-D h-BN Nanopore with Ionic-Liquid/Salt-Water Interface,” Electrophoresis 42, 991-1002 (2021).
J. Jeong, D.K. Jin, J. Choi, J. Jang, B.K. Kang, Q. Wang, W.I. Park, B-S Bae, W.S. Yang, M.J. Kim, and Y.J. Hong, “Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy,” Nano Energy 86, 106075 (2021).
M. I. Pintor-Monroy, M. G. Reyes-Banda, C. Avila-Avendano and M. A. Quevedo-Lopez, “Tuning Electrical Properties of Amorphous Ga2O3 Thin Films for Deep UV Phototransistors,” in IEEE Sensors Journal, doi: 10.1109/JSEN.2021.3074623.
M. G. Reyes-Banda, L. Fernandez-Izquierdo, S. S. Nandagopala Krishnan, J. A. Caraveo-Frescas, X. Mathew, and M. Quevedo-López, “Material Properties Modulation in Inorganic Perovskite Films via Solution-Free Solid-State Reactions,” ACS Appl. Electron. Mater. 2021, 3, 3, 1468–1476.
S. Tiwari, M. L. Van de Put, B. Soree and W. G. Vandenberghe, “Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers,” npj 2D Mater Appl 5, 54 (2021).
J. Bizindavyi, A. S. Verhulst, B. Soree and W. Vandenberghe, “Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation,” Commun Phys 4, 86 (2021).