AWARDS AND RECOGNITIONS

• $120,000 ($30,000 for UTD), Department of Energy, “Innovative /Low Cost/Large Area Single Crystal Diamond X-Ray Detector,” N. Kumar, O. Auciello.
• $120,000, National Secretary of Science, Technology and Innovation (SENACYT)-Panamá, “Technological Development of a New Generation of Li-Ion Batteries with Ultrananocrystalline Diamond Coating,” E. de Obaldia, O. Auciello.
• $20,000, Northrop Grumman Corp., “Oxide Semiconductor modeling,” K. Cho.
• $75,000, SRC/DARPA, “Amorphous oxide semiconductors,” K. Cho.
• $100,000, UT Dallas, “Machine Learning Guided Molecular Design for Indoor Light Harvesting,” M. Stefan, J. W. P. Hsu, J. Ouyang.
• $114,687, National Science Foundation, “A General and Robust Route to Highly Diverse Hollow Nanostructures with New Properties,” M. J. Kim.
• $100,000, Texas Instruments Inc., “Analysis of Epitaxial Growth for HEMT Devices,” M. J. Kim.
• $70,000, Texas Instruments Inc., “E-fuse failing mechanisms,” M. A. Quevedo.
• $150,000, DHS, “Anomaly detection,” M. A. Quevedo.
• $305,134 (3 year), Intel Corp., “Theoretical Investigation of Transition-Metal Dichalcogenide Contacts and Doping,”, G. Vandenberghe.
• $100,000, UT Dallas, “SPIRe: The Marriage of Two-Dimensional Materials and Topological Insulators,” W. G. Vandenberghe.
• $120,896, TSMC, “Study of Electronic Transport in Extremely Scaled Semiconductors,” W. G. Vandenberghe.
• $287,500 (3 year), Semiconductor Research Corporation, “New Layered 2D Gate Dielectrics for Scaled BEOL Transistors,” C. L. Hinkle, W. G. Vandenberghe.
• $300,000, National Science Foundation (Division of Materials Research), “Collaborative Research: Atomically thin topological insulators via confinement heteroepitaxy,” R. M. Wallace.
• $300,000 (amendment to $1,036,248 total), Semiconductor Research Corporation (NEWLIMITs nCORE Center-Purdue), “New LIMITS: New Logic, Memory and Interconnects Center,” R. M. Wallace.