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Research Highlights

Advanced Materials Technologies

A Ga2O3/CsPbBr3 solid‐state diode for indirect neutron detection is demonstrated by Dr. Manuel Quevedo‐Lopez and his group. This is enabled by a novel solvent‐free deposition method that allows CsPbBr3 films with pure CsPbBr3 perovskite phase, controlled stoichiometry and large grains.

Dr. Vandenberghe


Dr. William Vandenberghe and his group study the behavior of magnetic phase changes in critical temperature using first-principles density functional theory calculations and Monte Carlo simulations. Theoretical understanding of magnetism in 2D layered materials is of great importance for their possible use in futuristic spin-based technologies.

Advanced Optical Materials

Aditya Mishra, a PhD student sponsored by an MSE affiliated professor, Dr. Jason Slinker, recently published an article that was selected as the cover story for the July 6, 2020 issue of Advanced Optical Materials. Mishra designed the cover art and is listed as first author of the paper, “Enhanced Operational Stability of Perovskite Light‐Emitting Electrochemical Cells Leveraging Ionic Additives”.

Other Recent Publications

  • Auciello, O., Aslam, D.M. “Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies,” J Mater Sci (2021).
  • W. Xu, T. B. Daunis, R. T. Piper, and J. W. P. Hsu, “Effects of Photonic Curing Processing Conditions on MAPbI3 Film Properties and Solar Cell Performance,” ACS Appl. Energy Mater. 3 (9), 8636-8645 (2020).
  • S. Thampy, B. Zhang, J.-G. Park, K.-H. Hong, and J. W. P. Hsu, “Bulk and Interfacial Decomposition of Formamidinium Iodide (HC(NH2)2) in Contact with Metal Oxide,” Mater. Adv. 1, 3349-3357 (2020).
  • J. Jeong, D. Jin, J. Cha, B. Kang, Q. Wang, S. Lee, V. Mikhailovskii, V. Neplokh, N. Amandor-Mendez, M. Txherncheva, W. Yang, J. Yoo, M.J. Kim, S. Hong and Y.J. Hong, “Graphene intaglio pattern for selective-area remote epitaxy of ZnO microrod arrays,” ACS App. Mater. Inter. 3, 8920-8930 (2020).
  • Y. Wang, S. Yao, P. Liao, S. Jin, Q. Wang, M.J. Kim, G. Cheng and W. Wu, “Strain-engineered anisotropic optical and electrical properties in 2D chiral-chain tellurium,” Adv. Mater. 32, 2002342 (2020).
  • Yong Chan Jung, SuMin Hwang, Dan N. Le, Asyun Kim, Antonio T. Lucero, Arul Ravinchandran, Harrison Sejoon Kim, So Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim, “Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as a nitridation Agent” Materials, 13. 3387 (2020).
  • Harrison S. Kim, Su Min Hwang, Xin Meng, YoungChul Byun, Arul V. Ravichandran, Akshay Sahota, Si Joon Kim, Jinho Ahn, Lance Lee, Xiaobing Zhou, Byung K. Hwang, Jiyoung Kim, “High Growth Rate and High Wet Etch Resistance Silicon Nitride Grown by Low Temperature Plasma Enhanced Atomic Layer Deposition with a Novel Silyamine Precursor,” Jour. Material. Chem. C, 8(37), pp. 13033-13039 (2020).
  • Auciello, G. Lee, C. Wu, Y. Chen, J. J. Alcantar-Peña, I. Mejia, and E. de Obaldia, “Super High-Dielectric Constant Oxide Films for Next-Generation Nano-Electronics and Supercapacitors for Energy Storage,” MRS Bulletin vol. 45 (2020).
  • Villareal, F. P. Wittel, A. Rajan, P. Wittel, J. Alcantar-Peña, O. Auciello, E. de Obaldia, “Effect of Nitrogen Flow on the Growth of Nitrogen Ultrananocrystalline Diamond (N-UNCD) Films on Si/SiO2/HfO2 substrate,” Proceedings, IEEE-7th International Engineering, Sciences and Technology Conference 78-84 (2019).
  • Chae, J. Hwang, E. Chagarov, A. Kummel, and K. Cho, “Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films,” Journal of Applied Physics 128, 054101 (2020).
  • Lee, X. Yao, M. V. Fischetti, K. Cho, “Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches,” Phys.Chem.Chem.Phys.,2020,22,8616.
  • Thampy, B. Zhang, K.-H. Hong, K. J. Cho and J. W. P. Hsu, “Altered Stability and Degradation Pathway of CH3NH3PbI3 in Contact with Metal Oxide,” ACS Energy Lett. 5 (4), 1147-1152 (2020)
  • B. Daunis, K. A. Schroder, and J. W. P. Hsu, “Photonic Curing of Solution-Deposited ZrO2 Dielectric on PEN: A Path Towards High-Throughput Processing of Oxide Electronics,” npj Flexible Electronics 4, 7 (2020).
  • Jeong, Q. Wang, J. Cha, D. K. Jin, D. H. Shin, S. Kwon, B. K. Kang, J. H. Jang, W. S. Yang, Y. S. Choi, J. Yoo, J. K. Kim, C.H. Lee, S.W. Lee, A. Zakhidov, S. Hong, M. J. Kim, et al, “Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle,” Sci. Adv. 6, eaaz5180 (2020).
  • Wang, S. Yao, P. Liao, S. Jin, Q. Wang, M. J. Kim, et al, “Strain-engineered anisotropic optical and electrical properties in 2D chiral-chain tellurium,” Adv. Mater. 32, 2002342 (2020).
  • S.S. Nandagopala Krishnan, C. Avila-Avendano, Z. Shamsi, J.A. Caraveo-Frescas, M. A. Quevedo-Lopez, “10B Conformal Doping for Highly Efficient Thermal Neutron Detectors,” ACS Sensors 0c01013 (2020).
  • Moreno, J. Keshtkar, R. A. Rodriguez-Davila, A. Bazaid, H. Ibrahim, B. J. Rodriguez, M. A. Quevedo-Lopez, et al, “Bioelectronics on Mammalian Collagen,” Advanced Electronic Materials 6, 2000391 (2020).
  • Kramer, M.L. Van de Put, C. L. Hinkle, W. G. Vandenberghe, “Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study,” npj 2D Materials and Applications 4, 10 (2020).
  • A. Laturia, M.L. Van de Put, W. G. Vandenberghe, “Generation of empirical pseudopotentials for transport applications and their application to group IV materials,” Journal of Applied Physics 128, 034306 (2020).
  • J. Mleczko, A. C. Yu, C. M. Smyth, V. Chen, Y. C. Shin, S. Chatterjee, Y-C. Tsai, Y. Nishi, R. M. Wallace, E. Pop, “Contact Engineering High Performance n-Type MoTe2 Transistors,” Nano Letters, 19 (9), 6352-6362 (2019).
  • C.M. Smyth, L. Walsh, P. Bolshakov, M. Catalano, R. Addou, L. Wang, J. Kim, M. J. Kim, C. Young, C. L. Hinkle, R. M. Wallace, “Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High Performance Hole Contacts,” ACS Applied Nano Materials, 2(1) 75-88 (2019).