2021 Research Highlights
Dr. Chadwin Young’s group was informed by AIP Publishing that two of their articles were recently highlighted in an email message promoting a new collection on 2D transistors in Applied Physics Letters. The compilation was curated to showcase the evolution in 2D materials-based transistor investigations where two papers by Pavel Bolshakov PhD’19 were chosen by the guest editor as influential contributions to the field. The selected papers showcased: 1) How using aluminum oxide (Al2O3) as the bottom-gate oxide can have a positive impact on the top-gate MoS2 transistor performance and 2) investigated the promise of dual-gated MoS2 FETs, which deliver noteworthy insight into the influence of oxide charges and noticeably enhances overall device performance, where a near-ideal subthreshold swing of ~60 mV/dec and a high field effect mobility of 100 cm^2V·s were achieved. These papers would not have been possible without the in-situ deposition and characterization capability of Dr. Wallace’s group.
- P. Bolshakov, A. Khosravi, P. Zhao, P.K. Hurley, C.L. Hinkle, R.M. Wallace, and C.D. Young, “Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics,” Applied Physics Letters, vol. 112, no. 25, p. 253502, 2018.
- P. Bolshakov, P. Zhao, A. Azcatl, P.K. Hurley, R.M. Wallace, and C.D. Young, “Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer,” Applied Physics Letters, vol. 111, no. 3, p. 032110, 2017.
OTHER PUBLICATIONS
- Yaoqiao Hu, Xiaolong Yao, Darrell G. Schlom, Suman Datta, and Kyeongjae Cho, “First Principles Design of High Hole Mobility p-Type Sn–O–X Ternary Oxides: Valence Orbital Engineering of Sn2+ in Sn2+–O–X by Selection of Appropriate Elements X,” Chem. Mater. 2021, 33, 1, 212–225.
- Yeonghun Lee, Grigory Kolesov, Xiaolong Yao, Efthimios Kaxiras and Kyeongjae Cho, “Nonadiabatic dynamics of cobalt tricarbonyl nitrosyl for ligand dissociation induced by electronic excitation,” Sci Rep 11, 8997 (2021).
- R. T. Piper, T. B. Daunis, W. Xu, K. A. Schroder, and J. W. P. Hsu, “Photonic Curing of Nickel Oxide Transport Layer and Perovskite Active Layer for Flexible Perovskite Solar Cells: A Path towards High-throughput Manufacturing,” Front. Energy Res. 9, 640960 (2021).
- M. G. S. Rao, J. Meza-Arroyo, K. C. S. Reddy, L. N. S. Murthy, T. B. Daunis, M. S. de Urquijo-Ventura, F. Garibay-Martinez, J. W. P. Hsu, and R. Ramirez-Bon, “Tuning the Electrical Performance of Solution-Processed In2O3TFTs by Modulation of Temperature with sol-gel HfO2-PVP Hybrid Dielectric,” Mater. Today Comm. 26, 102120 (2021).
- J.S. Lee, J. Oviedo, Y.M. Nuwan, D.Y. Bandara, X. Peng, L. Xia, Q. Wang, K. Garcia, J. Wang, M. Kim, and M.J. Kim, “Detection of Nucleotides in Hydrated ssDNA via 2-D h-BN Nanopore with Ionic-Liquid/Salt-Water Interface,” Electrophoresis 42, 991-1002 (2021).
- J. Jeong, D.K. Jin, J. Choi, J. Jang, B.K. Kang, Q. Wang, W.I. Park, B-S Bae, W.S. Yang, M.J. Kim, and Y.J. Hong, “Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy,” Nano Energy 86, 106075 (2021).
- M. I. Pintor-Monroy, M. G. Reyes-Banda, C. Avila-Avendano and M. A. Quevedo-Lopez, “Tuning Electrical Properties of Amorphous Ga2O3 Thin Films for Deep UV Phototransistors,” in IEEE Sensors Journal, doi: 10.1109/JSEN.2021.3074623.
- M. G. Reyes-Banda, L. Fernandez-Izquierdo, S. S. Nandagopala Krishnan, J. A. Caraveo-Frescas, X. Mathew, and M. Quevedo-López, “Material Properties Modulation in Inorganic Perovskite Films via Solution-Free Solid-State Reactions,” ACS Appl. Electron. Mater. 2021, 3, 3, 1468–1476.
- S. Tiwari, M. L. Van de Put, B. Soree and W. G. Vandenberghe, “Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers,” npj 2D Mater Appl 5, 54 (2021).
- J. Bizindavyi, A. S. Verhulst, B. Soree and W. Vandenberghe, “Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation,” Commun Phys 4, 86 (2021).