Massimo (Max) V. Fischetti

Professor, Texas Instruments Distinguished Chair in Nanoelectronics

max.fischetti@utdallas.edu
Phone: 972-883-5724
Office: RL 3.708

800 West Campbell Rd.
Mailstop: RL10
Richardson, TX 75080-3021

Curriculum Vitae

Education

PhD, Physics, University of California, Santa Barbara, 1978

Overview

Dr. Massimo V. Fischetti received a “Laurea” degree from the University of Milan in 1974 and a PhD degree from the University of California, Santa Barbara in 1978, both in physics. In 1979, he joined STMicroelectronics in Italy, where he conducted experimental work on the hot-electron degradation of silicon dioxide. In 1983, Fischetti became a research staff member at IBM’s Thomas J. Watson Research Center in Yorktown Heights, New York. There, he initially continued experimental work on high-field degradation of silicon dioxide, but in 1985, he became interested in the theoretical aspects of electron transport in insulators.
This interest was later extended to semiconductors leading, in collaboration with Dr. Laux, to the development of DAMOCLES, the first full-band Monte Carlo device simulator implementing physical models of collisional processes in Si (electron-phonon and impact ionization) based on extensive theoretical and experimental work.

DAMOCLES was used in 1987 to investigate electron transport in 0.1 μm Si field-effect transistors to analyze the performance of III-V-based devices in the sub-100 nm technology and, in collaboration with Dr. Frank, to establish the scalability of double-gate FETs. Further studies focused on hot electron transport, on the effect of strain on carrier mobility in Si and Ge and on the effect of high-insulators and carrier-carrier Coulomb interactions in sub-100 nm FETs.

Having joined the Department of Electrical and Computer Engineering at the University of Massachusetts in 2005, Fischetti continued to explore the limits of device scaling, future device materials and designs and on quantum transport in nano-structures using a master equation approach. Since September 1, 2010, Fischetti holds a Texas Instruments Distinguished Chair in Nanoelectronics in the Materials Science and Engineering Department at The University of Texas at Dallas.

Fischetti is a fellow of the American Physical Society, has received three awards from the IBM Research Division, will be the co-recipient of the 2011 IEEE Cledo Brunetti Award, has served or serves on the editorial board of several international physics journals, and has authored or co-authored over 150 publications in peer-reviewed journals, conference proceedings and books.

Research Interests

• Electronic transport in large semiconductor devices
• Band-structure calculations
• Semiclassical transport
• Quantum transport