Don Shaw

Professor Emeritus, National Academy of Engineering Member

dshaw@utdallas.edu
Phone: 972-883-2648
Office: RL 1.408

800 West Campbell Rd.
Mailstop: RL 10
Richardson, TX 75080-3021

Education

PhD, Physical Chemistry, Baylor University, 1965
BS, Mathematics & Chemistry, East Texas State University, 1958

Overview

Don Shaw is an emeritus professor of materials science and electrical engineering in the Erik Jonsson School of Engineering & Computer Science. Dr. Shaw joined UT Dallas after retiring from Texas Instruments, where he was a TI Principal Fellow and director of the company’s Materials Science Laboratory.

He joined the Central Research Laboratories of Texas Instruments soon after receiving his Ph.D.  There he spent over thirty years investigating crystal growth and dissolution, the kinetics of vapor phase epitaxial growth, materials for solid-state microwave devices, and preparation and properties of gallium arsenide. Eventually he was named founding director of the Tsukuba Research and Development Center, the company’s first overseas R&D center. He spent three years in Japan before completing this assignment and returning to the U.S. to resume responsibility for the Materials Science Laboratory.

In 1993 he became only the fourth person in TI’s history to be promoted to its highest technical position, TI Principal Fellow.  Dr. Shaw has served as an associate editor of the Journal of Crystal Growth and a principal editor of the Journal of Materials Research.  He has received the Electrochemical Society’s Electronics Division Award; the Wilfred T. Doherty Award and the Salute to Excellence Award given by the DFW Section of the American Chemical Society; MIT’s Harry C. Gatos Prize, the International Gallium Arsenide Symposium Award; and the Heinrich Welker Gold Medal.  He was elected to the National Academy of Engineering in 1988.

Research Interests

  • Crystal growth and dissolution
  • The kinetics of vapor phase epitaxial growth
  • Materials for solid-state microwave devices
  • Preparation and properties of gallium arsenide